Channel-Width-Dependent Mobility Degradation in Bulk Conduction Regime of Tri-Gate Junctionless Transistors
نویسندگان
چکیده
Junctionless transistors (JLTs) have promising strengths such as extremely simple structures without p-n junctions, better reliability, and low flicker noise, for overcoming scaling challenges advanced sub-5-nm nodes. In this article, channel-width-dependent operation in the partially depleted regime of tri-gate JLTs was investigated comparison to conduction conventional inversion-mode (IM) transistors. A large difference transconductance ( ${g} _{m}$ ) against gate-to-channel capacitance notation="LaTeX">${C} _{gc}$ reduced amplitude first peak on notation="LaTeX">$dg_{m}$ / notation="LaTeX">$dV_{g}$ were identified under JLTs, due a severe transverse notation="LaTeX">${E}$ -field near-threshold voltage notation="LaTeX">${V} _{th}$ ). However, impact weakened decreasing channel width JLTs. These works provide key information understanding performance implementing practical applications with them.
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2022
ISSN: ['0018-9383', '1557-9646']
DOI: https://doi.org/10.1109/ted.2022.3172056